?guangdong hottech industrial co.,ltd e-mail:hkt@h eketai.com 1 / 4 HAA1298(pnp) general purpose transistor replacement type : kt a1298 feat ures ? lo w frequency power amplifier application ? power switching application maximum ratings (t a = 25c unless otherwise noted) electrical characteristics (t a = 25c unle ss otherwise noted) parameter symbol test conditions min typ max unit collector-bas e breakdown voltage v cbo i c =-1m a,i e =0 -3 5 v collector-emitter breakd own voltage v ceo i c =- 10ma,i b =0 -3 0 v emitter-base br eakdown voltage v ebo i e =-1m a,i c =0 -5 v collector cut-o ff current i cbo v cb =- 30v,i e =0 -0 .1 a emitter cut-off current i ebo v eb =-5v ,i c =0 -0 .1 a dc current gain h fe(1) v ce =-1 v,i c = -100ma 100 320 h fe(2) v ce =-1 v, i c = -800ma 40 collector-emitter satu rati on voltage v ce(sa t) i c =- 500ma,i b =- 20ma -0.4 v base- emitter voltage v be v ce =-1v , i c =-10 ma -0.5 -0.8 v t ransition frequency f t v ce =-5 v,i c = -10ma 120 mhz collector outp ut capacitance c ob v cb =- 10v,i e =0, f=1mhz 13 pf cla ssification of h fe rank o y range 100- 200 160-320 marking io iy parameter symbol v alue unit collector-bas e voltage v cbo -35 v collector-emitter vo ltage v ceo -30 v emitter-base vo ltage v ebo -5 v collector curr ent-continuous i c -0.8 a collector po wer dissipation p c 200 mw junction temperature t j 150 c st orage temperature t stg -55~+ 150 c sot-23 1: base 2:e mitter 3: collector
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 2 / 4 HAA1298(pnp) general purpose transistor typical characteristics -0 -1 -2 -3 -4 -5 -0 -20 -40 -60 -80 -100 -120 -140 -1 -10 -100 -200 -400 -600 -800 -1000 -1 -10 -100 -10 -100 -1000 -0.1 -1 -10 1 10 100 -1 -10 -100 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 250 -0 -200 -400 -600 -800 -1000 -0.1 -1 -10 -100 -1 -10 -100 -1 -10 -100 -1000 common emitter t a =25 -450ua -400ua -350ua -300ua -250ua -200ua -150ua -100ua i b =-50ua collector current i c (ma) collector-emitter voltage v ce (v) static characteristic base-emitter saturation voltage v besat (mv) collector current i c (ma) =25 ta=25 ta=100 i c v besat -800 dc current gain h fe collector current i c (ma) v ce =-1v ta=25 o c ta=100 o c i c h fe -800 c ob c ib reverse voltage v (v) capacitance c (pf) f=1mhz i e =0/ i c =0 ta=25 o c v cb / v eb c ob / c ib -20 i c vce=-5v ta=25 o c transition frequency f t (mhz) collector current i c (ma) ambient temperature t a ( ) collector power dissipation p c (mw) p c t a f t vce=-1v ta=100 ta=25 i c v be collcetor current i c (ma) base-emmiter voltage v be (mv) -800 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) =25 ta=100 ta=25 i c v cesat -800
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 3 / 4 HAA1298(pnp) general purpose transistor sot-23 package outline dimensions dimensions in millimeters dimensions in inches symbol min. max. min. max. a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e 0.950 ty p 0.037 ty p e1 1.800 2.000 0.071 0.079 l 0.550 r e f 0.022 r e f l1 0.300 0.500 0.012 0.020 0 8 0 8
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 4 / 4 HAA1298(pnp) general purpose transistor sot-23 embossed carrier tape sot-23 tape leader and traller sot-23 reel dimensions are in millimeter reel option d d1 d2 g h i w1 w2 7 dia 178 54.40 13.00 r78 r25.60 r6.50 9.50 12.3 0 tolerance 2 1 1 1 1 1 1 1 dimensions are in millimeter type a b c d e f p0 p p1 w sot-23 3.15 2.77 1.22 1.50 1.75 3.50 4.00 4.00 2.0 0 8.00 tolerance 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1
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